BSDW20S65C6

$5.53

Description：DIODE ARRAY SIC 650V 20A TO-247
Series：-

SKU:cd492972eb56 Category: Diode Arrays Brand: Bourns Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSDW20S65C6 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Bourns Inc.. Its product description is DIODE ARRAY SIC 650V 20A TO-247. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BSDW20S65C6

Description：DIODE ARRAY SIC 650V 20A TO-247
Series：-
Mfr：Bourns Inc.
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io) (per Diode)：20A
Voltage - Forward (Vf) (Max) @ If：1.45 V @ 10 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：50 µA @ 650 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

Diode Arrays datasheet and documents for BSDW20S65C6

BSDW20S65C6

Diode Arrays Overview

The Bourns BSDW20S65C6 is a Silicon Carbide Schottky Diode rated for 650 V repetitive peak reverse voltage and 20 A average forward current. It features a low forward voltage drop of 1.45 V at 10 A and 25 °C, with a maximum operating junction temperature of 175 °C. The device offers high peak forward surge current capability of 85 A and reduced electromagnetic interference. Packaged in a TO247-3 configuration, it provides excellent thermal performance with a junction-to-mounting base thermal resistance of 1.15 °C/W.

Diode Arrays Feature Summary

Low forward voltage drop for high efficiency
High peak forward surge current capability
Reduced electromagnetic interference
Maximum operating junction temperature up to 175 °C

Diode Arrays Applications

Switched-Mode Power Supplies (SMPS)
Power Factor Correction (PFC)
PV inverters
DC-DC converters
Telecommunications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance with RoHS and halogen-free requirements. Confirm package dimensions and pinout compatibility with your PCB layout before procurement. Ensure that the ambient temperature conditions align with the specified derating curves for optimal thermal management.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency switching and robust surge handling capabilities. The wide bandgap silicon carbide material ensures stable switching behavior independent of temperature. Consider the TO247-3 package for efficient heat dissipation in high-power density designs where low reverse leakage current is critical.

Diode Arrays Part Context

This part belongs to the Bourns SDW series of Silicon Carbide Schottky Diodes. These components are designed for rectification applications in assorted styles, offering advanced high-efficiency power performance. The series supports converters requiring high peak forward surge capability and low forward voltage drop.

Diode Arrays Replacement Considerations

Consult the official Bourns product selector or technical library for verified substitute part numbers within the SDW series or equivalent SiC diode families. Cross-referencing should be performed based on voltage rating, current capacity, and package type.