BSH111,215

$0.06

Description：MOSFET N-CH 55V 335MA TO236
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:9ee2c163e101 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSH111,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 55V 335MA TO236. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSH111,215

Description：MOSFET N-CH 55V 335MA TO236
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：1 nC @ 8 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：830mW (Tc)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSH111,215

BSH111,215

Single FETs, MOSFETs Overview

The BSH111,215 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 335 mA at 25 °C. The device operates with a junction temperature range from -65 °C to +150 °C. Key electrical parameters include a maximum on-state resistance of 4.0 Ω at VGS = 4.5 V and 8.0 Ω at VGS = 1.8 V. Total power dissipation reaches 0.83 W at 25 °C. The component is housed in a SOT-23 surface-mount package.

Single FETs, MOSFETs Feature Summary

TrenchMOS technology implementation
Very fast switching capability
Low threshold voltage design
Subminiature surface mount package

Single FETs, MOSFETs Applications

Battery management
High speed switch
Logic level translator

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and reel specifications. Ensure compatibility with standard SOT-23 footprint dimensions during PCB layout. Confirm that the selected variant meets all required thermal and electrical constraints for the intended operating environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low gate drive voltage and rapid switching performance. Evaluate the on-state resistance characteristics at the specific gate-source voltage levels used in the target circuit. Consider the thermal resistance values when designing heat dissipation strategies for high ambient temperatures or dense board layouts.

Single FETs, MOSFETs Part Context

This N-channel MOSFET belongs to the Philips Semiconductors product line, now part of Nexperia. It represents a compact solution for general-purpose switching tasks where space is limited. The device leverages planar trench technology to achieve improved switching speeds compared to older planar processes while maintaining robust reliability standards.