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BSL202SNL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 7.5A TSOP-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSL202SNL6327HTSA1
- Description：MOSFET N-CH 20V 7.5A TSOP-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1147 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSOP6-6
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for BSL202SNL6327HTSA1
Single FETs, MOSFETs Overview
The BSL202SNL6327HTSA1 is a Gallium Nitride (GaN) field-effect transistor manufactured by Infineon Technologies. It features an N-channel configuration housed in a TSOP-6 surface-mount package. The device supports a drain-source breakdown voltage of 20 V and delivers a continuous drain current of 7.5 A. Key electrical parameters include a maximum on-resistance of 22 mOhms, a gate-source voltage range of -12 V to +12 V, and a power dissipation capacity of 2 W. It operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes Gallium Nitride technology for enhanced switching performance
- Features low on-resistance for efficient power handling
- Designed for high-speed switching applications with nanosecond transition times
Single FETs, MOSFETs Applications
- High-frequency power conversion circuits
- DC-DC converter topologies requiring fast switching
- Automotive power electronics systems
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm the specific suffix L6327 matches required packaging specifications. Check current lifecycle status as manufacturing transitions may affect long-term availability. Ensure compatibility with existing thermal management designs given the TSOP-6 package constraints.
Single FETs, MOSFETs Selection Notes
Select this component when GaN material advantages are required for efficiency gains over silicon alternatives. Consider the 20V rating for low-voltage high-current applications. Evaluate the TSOP-6 footprint against available PCB real estate. Compare switching speeds against standard MOSFETs to determine suitability for high-frequency operation requirements.
Single FETs, MOSFETs Part Context
This part belongs to the BSL202 series of GaN FETs from Infineon. It represents a shift toward wide-bandgap semiconductors in compact packages. The series targets applications demanding higher power density and reduced switching losses compared to traditional silicon-based solutions.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility if considering alternative manufacturers' GaN devices.
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