BSL302SNH6327XTSA1

$0.49

Description：MOSFET N-CH 30V 7.1A TSOP-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3922c7c93d25 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSL302SNH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 7.1A TSOP-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSL302SNH6327XTSA1

Description：MOSFET N-CH 30V 7.1A TSOP-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id：2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TSOP6-6
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for BSL302SNH6327XTSA1

BSL302SNH6327XTSA1

Single FETs, MOSFETs Overview

The BSL302SNH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS®2 series, housed in a PG-TSOP-6 surface-mount package. It features a drain-source breakdown voltage of 30 V and supports continuous drain currents up to 7.1 A at 25 °C. The device exhibits low on-state resistance, with maximum values of 25 mΩ at VGS=10 V and 38 mΩ at VGS=4.5 V. Key electrical parameters include a gate threshold voltage of 1.2 V to 2 V, total gate charge of 4.4 nC to 6.6 nC, and power dissipation of 2 W. It operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Logic level operation rated for 4.5 V gate drive
Avalanche energy rated capability
High dv/dt rating for fast switching applications
Qualified according to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

Automotive load switching
DC-DC converter synchronous rectification
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm that the ordering suffix matches the required packaging format. Ensure compliance with RoHS directives and halogen-free requirements as stated in the product documentation before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a low RDS(on) N-channel MOSFET is required for logic-level driving applications. Consider the 30 V breakdown voltage and 7.1 A current capacity for suitable thermal management. Evaluate the avalanche rating if inductive load protection is necessary without external snubbers.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS®2 small-signal transistor family, designed for high efficiency and reliability. The series targets automotive and industrial applications requiring robust performance in compact surface-mount packages. It complements other P-channel variants like the BSL305SPEH6327XTSA1 for complementary bridge configurations.