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The BSM25GD120DN2BOSA1 is a three-phase full-bridge IGBT power module from Infineon's DN2 series, rated for 1200 V collector-emitter voltage and 25 A continuous DC collector current at 25 °C. It integrates six N-channel IGBT elements with built-in fast free-wheeling diodes in an EconoPACK 2 flange-mount package featuring an insulated metal base plate. The module supports a maximum junction temperature of 150 °C and includes 17 terminals for gate and power connections.
Verify the specific ordering code C67076-A2514-A67 against official Infineon documentation to confirm availability and revision status. Ensure compatibility with existing cooling infrastructure due to the flange-mount form factor. Cross-reference the suffix BOSA1 with manufacturer datasheets to validate any potential variations in terminal plating or internal bonding compared to standard variants.
Select this component for designs requiring a compact three-phase bridge solution with moderate current ratings up to 25 A. The DN2 series offers standard switching speeds suitable for frequencies between 4 kHz and 8 kHz. Consider the thermal resistance of the insulated base plate when designing heatsink interfaces for continuous operation at elevated temperatures.
This module belongs to Infineon's BSM series of discrete IGBT power modules. The DN2 designation indicates standard switching performance within the 1200 V voltage class. It is part of a broader family including higher current variants like the BSM50GD120DN2, sharing similar packaging and interface standards for system scalability.
Direct replacements include other BSM25GD120DN2 variants with different suffixes if electrical parameters remain identical. Verify pinout compatibility before substituting with older revisions or alternative packages such as the BSM25GB120D.