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The BSM25GP120BOSA1 is a silicon IGBT module manufactured by Infineon Technologies, classified as a Power Integrated Module (PIM). It features an Array 7 configuration and utilizes the EconoPIM2 package. The device supports a collector-emitter maximum voltage of 1.6 kV and delivers a continuous collector current of 45 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.55 V, a power dissipation rating of 230 W, and a gate-emitter leakage current of 300 nA. The module operates within a temperature range of -40°C to +125°C and is designed for screw mount installation.
Verify the specific ordering suffix BOSA1 against official datasheets to confirm component revision and compliance status. Confirm availability through authorized distributors as supply conditions may vary. Ensure compatibility with existing system requirements before procurement.
Select this module for applications requiring a 1.6 kV blocking voltage and 45 A continuous current capability. The EconoPIM2 form factor suits designs prioritizing space efficiency. Verify that the required thermal resistance and cooling solutions align with the 230 W power dissipation specification.
This part belongs to Infineon's BSM series of IGBT modules, which are widely used in industrial power electronics. The BSM25GP120BOSA1 represents a specific variant within the GP120 family, characterized by its 1.6 kV rating and array topology, distinct from single or bridge configurations found in other series members.
BSM25GP120 is listed as a related part number with noted revisions. Verify if BSM25GP120 serves as a direct functional substitute or requires design adjustments due to potential parameter differences.