BSM35GD120DLCE3224BOSA1

Overview

The BSM35GD120DLCE3224BOSA1 is a silicon Insulated Gate Bipolar Transistor module manufactured by Infineon Technologies. It features an N-channel configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 35 A at 25 °C. The device utilizes the EconoPACK package style for efficient thermal management and includes built-in diodes within its bridge configuration. Key electrical parameters include a saturation voltage of 2.7 V, a power dissipation capacity of 280 W, and a gate-emitter leakage current of 150 nA. The operational temperature range spans from -40 °C to +150 °C.

Feature Summary

• Integrated six-element bridge topology with built-in diodes for compact power conversion designs
• EconoPACK housing provides optimized thermal performance and simplified mechanical mounting
• High-temperature silicon technology supports reliable operation in demanding industrial environments

Applications

• Industrial motor drives and servo systems
• Uninterruptible power supplies (UPS)
• Induction heating equipment

Procurement Notes

Verify the exact part number suffix against official manufacturer documentation before procurement. Confirm that the component meets specific RoHS compliance requirements for the target application region. Ensure that the supplier provides valid traceability records and original manufacturer certification to guarantee authenticity and quality assurance.

Selection Notes

Select this module based on the required 1200 V blocking capability and 35 A current rating. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the specified 280 W power dissipation. Verify compatibility with standard gate drive voltages and confirm that the screw-mount installation method fits the system enclosure constraints.

Part Context

This component belongs to the Infineon BSM series of IGBT modules, designed for medium-power applications. It represents a specific variant within the EconoPACK family, offering a balance between current handling and physical footprint. The designation indicates a 1200 V class device suitable for general-purpose industrial power electronics.

Replacement Considerations

Check for direct cross-references in Infineon's official replacement guides. Verify pinout compatibility and thermal interface dimensions when considering alternative suppliers or updated generations within the same voltage and current class.