BSM50GD120DN2G

Description：IGBT MOD 1200V 78A 400W
Series：-

SKU:ebbff034f107 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 78A 400W
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Configuration：Full Bridge
Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 50A
Input：Standard
NTC Thermistor：No
Operating Temperature：150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：78 A
Power - Max：400 W
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：33 nF @ 25 V

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BSM50GD120DN2G

Overview

The BSM50GD120DN2G is a 3-phase full-bridge IGBT power module from Infineon Technologies, housed in an EconoPACK 3 package with an insulated metal base plate. It integrates fast free-wheel diodes and supports a collector-emitter voltage of 1200 V. The DC collector current is rated at 50 A at TC = 80 °C and 78 A at TC = 25 °C. Maximum ratings include a gate-emitter voltage of ± 20 V, a maximum junction temperature of + 150 °C, and a storage temperature range of -40 to + 125 °C. Electrical characteristics specify a gate threshold voltage between 4.5 V and 6.5 V, and a collector-emitter saturation voltage of 2.5 V to 3.7 V at IC = 50 A.

Feature Summary

Integrated 3-phase full-bridge configuration with fast free-wheel diodes
EconoPACK 3 package design featuring an insulated metal base plate
High thermal performance with a maximum junction temperature of + 150 °C

Applications

Industrial motor drives and variable speed drives
Uninterruptible power supplies (UPS)
Induction heating systems

Procurement Notes

Verify the exact ordering code C67070-A2521-A67 against official Infineon documentation before procurement. Confirm that the component meets specific insulation test voltage requirements of 2500 Vac for one minute. Ensure thermal management solutions are compatible with the specified chip-to-case thermal resistance values.

Selection Notes

Select this module for applications requiring a 1200 V rating and up to 78 A continuous current capability. Evaluate the switching times and reverse recovery charge of the integrated diodes against the target operating frequency. Verify that the gate drive circuitry can accommodate the specified threshold voltage range and leakage currents under varying temperature conditions.

Part Context

This component belongs to the BSM series of IGBT modules originally developed by Siemens and later managed by EUPEC before becoming part of Infineon Technologies. The 'DN2' suffix typically denotes specific switching characteristics within this product family. The module utilizes silicon technology and is designed for high-power industrial applications.