BSM75GAL120DN2HOSA1

BSM75GAL120DN2HOSA1

  • Description:IGBT MOD 1200V 105A 625W
  • Series:-

SKU:bb439c389508 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 105A 625W
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:Single Switch
  • Vce(on) (Max) @ Vge, Ic:3V @ 15V, 75A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):105 A
  • Power - Max:625 W
  • Current - Collector Cutoff (Max):1.4 mA
  • Input Capacitance (Cies) @ Vce:5.5 nF @ 25 V

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BSM75GAL120DN2HOSA1

Overview

The BSM75GAL120DN2HOSA1 is a half-bridge power module manufactured by Infineon Technologies. It integrates two N-channel IGBTs with built-in anti-parallel diodes in a single package. The device supports a maximum collector current of 105 A and withstands a collector-emitter voltage of 1200 V. It utilizes the Half Bridge GAL 1, 7-pin form factor with flange mount packaging. The component operates at a maximum junction temperature of 150 °C and complies with RoHS standards.

Feature Summary

  • Integrates high-voltage IGBT switches with fast recovery diodes for efficient power conversion
  • Provides galvanic isolation between terminals to ensure circuit safety
  • Features a robust flange mount design optimized for effective thermal dissipation

Applications

  • Industrial motor drives and inverters
  • Uninterruptible power supply (UPS) systems
  • High-frequency welding equipment

Procurement Notes

Verify the specific suffix HOSA1 against official manufacturer documentation to confirm compliance with regional environmental directives such as RoHS. Ensure the ordering code matches the exact pin configuration and thermal characteristics required for the target application before finalizing procurement.

Selection Notes

Select this module when designing circuits requiring 1200 V blocking capability and continuous currents up to 105 A. Confirm that the PCB layout or heatsink interface accommodates the 7-pin Half Bridge GAL footprint. Validate that the gate drive signals are compatible with standard IGBT switching requirements.

Part Context

This component belongs to Infineon's GAL series of half-bridge modules, designed for medium-power industrial applications. It serves as a core switching element in topologies requiring bidirectional current flow or synchronous rectification within a compact, isolated form factor.

Replacement Considerations

Direct replacements must match the 1200 V rating, 105 A current capacity, and 7-pin Half Bridge GAL mechanical outline. Verify that any substitute part maintains identical thermal resistance and electrical parameters to ensure system compatibility.

BSM75GAL120DN2HOSA1BSM75GAL120DN2HOSA1

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