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The BSM75GAL120DN2HOSA1 is a half-bridge power module manufactured by Infineon Technologies. It integrates two N-channel IGBTs with built-in anti-parallel diodes in a single package. The device supports a maximum collector current of 105 A and withstands a collector-emitter voltage of 1200 V. It utilizes the Half Bridge GAL 1, 7-pin form factor with flange mount packaging. The component operates at a maximum junction temperature of 150 °C and complies with RoHS standards.
Verify the specific suffix HOSA1 against official manufacturer documentation to confirm compliance with regional environmental directives such as RoHS. Ensure the ordering code matches the exact pin configuration and thermal characteristics required for the target application before finalizing procurement.
Select this module when designing circuits requiring 1200 V blocking capability and continuous currents up to 105 A. Confirm that the PCB layout or heatsink interface accommodates the 7-pin Half Bridge GAL footprint. Validate that the gate drive signals are compatible with standard IGBT switching requirements.
This component belongs to Infineon's GAL series of half-bridge modules, designed for medium-power industrial applications. It serves as a core switching element in topologies requiring bidirectional current flow or synchronous rectification within a compact, isolated form factor.
Direct replacements must match the 1200 V rating, 105 A current capacity, and 7-pin Half Bridge GAL mechanical outline. Verify that any substitute part maintains identical thermal resistance and electrical parameters to ensure system compatibility.