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BSN254A,126 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 250V 310MA TO92-3. Review the specifications below when checking this part for your BOM.
The BSN254A,126 is an N-channel enhancement mode vertical D-MOS transistor manufactured by NXP USA Inc. It operates with a drain-source voltage of up to 250 V and a continuous drain current of 310 mA. The device features a low on-state resistance (RDSon) of 5 Ω maximum at VGS = 10 V and ID = 300 mA. Packaged in the SOT54 (TO-92) variant, it supports direct interface to CMOS and TTL logic circuits. Key electrical characteristics include a gate-source threshold voltage range of 0.8 V to 2 V and a total power dissipation capability of 1 W at 25 °C ambient temperature.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and availability status. Confirm that the component meets all required environmental standards and RoHS compliance specifications for the intended deployment environment before finalizing procurement orders.
Select this component for applications requiring robust N-channel switching with high voltage tolerance. Ensure the drive circuit can provide sufficient gate-source voltage to achieve the specified low on-state resistance. Verify thermal management requirements based on the junction-to-ambient thermal resistance and expected power dissipation levels during operation.
This part belongs to the BSN series of N-channel enhancement mode vertical D-MOS transistors produced by Philips/NXP Semiconductors. These devices are designed for general-purpose switching applications where high reliability and fast switching speeds are required. The family typically offers various pinning configurations within the TO-92 package style.
BSN254
The maximum DC drain-source voltage (VDS) is rated at 250 V.
Yes, the datasheet specifies direct interface capability to CMOS, TTL, and other similar logic families.
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