Single FETs, MOSFETs BSN254A,126 product image

BSN254A,126

  • Description:MOSFET N-CH 250V 310MA TO92-3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Box (TB)

SKU:69de9e470afd Category: Brand:

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BSN254A,126 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 250V 310MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSN254A,126

  • Description:MOSFET N-CH 250V 310MA TO92-3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Box (TB)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):250 V
  • Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.4V, 10V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 300mA, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92-3
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Single FETs, MOSFETs datasheet and documents for BSN254A,126

BSN254A,126

Single FETs, MOSFETs Overview

The BSN254A,126 is an N-channel enhancement mode vertical D-MOS transistor manufactured by NXP USA Inc. It operates with a drain-source voltage of up to 250 V and a continuous drain current of 310 mA. The device features a low on-state resistance (RDSon) of 5 Ω maximum at VGS = 10 V and ID = 300 mA. Packaged in the SOT54 (TO-92) variant, it supports direct interface to CMOS and TTL logic circuits. Key electrical characteristics include a gate-source threshold voltage range of 0.8 V to 2 V and a total power dissipation capability of 1 W at 25 °C ambient temperature.

Single FETs, MOSFETs Feature Summary

  • Vertical D-MOS technology providing high-speed switching capabilities without secondary breakdown.
  • Low RDSon for efficient conduction in switching applications.
  • Direct compatibility with standard digital logic families such as CMOS and TTL.

Single FETs, MOSFETs Applications

  • Line current interruptor in telephone sets
  • Relay drivers
  • High-speed line transformer drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and availability status. Confirm that the component meets all required environmental standards and RoHS compliance specifications for the intended deployment environment before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust N-channel switching with high voltage tolerance. Ensure the drive circuit can provide sufficient gate-source voltage to achieve the specified low on-state resistance. Verify thermal management requirements based on the junction-to-ambient thermal resistance and expected power dissipation levels during operation.

Single FETs, MOSFETs Part Context

This part belongs to the BSN series of N-channel enhancement mode vertical D-MOS transistors produced by Philips/NXP Semiconductors. These devices are designed for general-purpose switching applications where high reliability and fast switching speeds are required. The family typically offers various pinning configurations within the TO-92 package style.

Single FETs, MOSFETs Replacement Considerations

BSN254

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum DC drain-source voltage (VDS) is rated at 250 V.

Does the device support direct interfacing with TTL logic?

Yes, the datasheet specifies direct interface capability to CMOS, TTL, and other similar logic families.

BSN254A,126BSN254A,126

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