BSO613SPVGHUMA1

$1.33

Description：MOSFET P-CH 60V 3.44A 8DSO
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:364368641c81 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSO613SPVGHUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 3.44A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO613SPVGHUMA1

Description：MOSFET P-CH 60V 3.44A 8DSO
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3.44A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：130mOhm @ 3.44A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：875 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO613SPVGHUMA1

BSO613SPVGHUMA1

Single FETs, MOSFETs Overview

The BSO613SPVGHUMA1 is a P-channel enhancement-mode power transistor from the Infineon SIPMOS series. It features a maximum drain-source voltage of -60 V and a continuous drain current of -3.44 A at 25 °C. The device has a typical on-state resistance of 0.13 Ω and a total gate charge of 20 nC. It operates within a temperature range of -55 °C to +150 °C, with a maximum power dissipation of 2.5 W. The component is housed in a lead-free PG-SO-8 package.

Single FETs, MOSFETs Feature Summary

Enhancement mode P-channel configuration
Rated for avalanche energy conditions
Capable of high dv/dt switching performance

Single FETs, MOSFETs Applications

High-side load switching
Motor control circuits
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and material composition. Ensure the requested part number matches the exact electrical specifications required for the target application circuit design.

Single FETs, MOSFETs Selection Notes

Select this component based on its -60 V rating and -3.44 A continuous current capability. Consider the thermal resistance characteristics and the need for avalanche ruggedness when designing the power stage layout and heat dissipation strategy.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon SIPMOS family of power transistors. It utilizes standard silicon technology optimized for surface-mount applications. The PG-SO-8 package provides a compact footprint suitable for automated assembly processes in modern electronic manufacturing.