BSP125 E6327

Single FETs, MOSFETs Overview

The BSP125H6327XTSA1 is a single N-channel enhancement-mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a SOT-223-4 surface-mount package. The device features a drain-source breakdown voltage of 600 V and a continuous drain current rating of 120 mA. Key electrical characteristics include a maximum on-resistance of 25 Ohms, a gate threshold voltage of 1.9 V, and a total gate charge of 4.4 nC. It operates within a temperature range of -55 °C to +150 °C and holds AEC-Q101 automotive qualification.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with a 600 V drain-source breakdown voltage for robust switching applications
• Automotive-grade reliability certified under the AEC-Q101 standard
• Low gate charge design facilitating efficient high-frequency switching operations

Single FETs, MOSFETs Applications

• Automotive electronic control units requiring high-voltage isolation
• General-purpose power switching circuits
• Load management systems in industrial environments

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering part number, typically BSP125H6327XTSA1, against official Infineon documentation to ensure correct suffix alignment. Confirm that the required packaging format matches available supply options such as cut tape or reel. Cross-reference the specific revision level to guarantee compatibility with existing design specifications and regulatory requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET is required in a compact SOT-223 form factor. The 600 V rating suits applications exceeding standard low-voltage limits. Ensure the 120 mA current capacity meets load demands. Verify that the thermal performance aligns with the system's heat dissipation capabilities given the 1.8 W power dissipation limit.

Single FETs, MOSFETs Part Context

This device belongs to the BSP125 series of N-channel depletion and enhancement mode MOSFETs from Infineon. These components are engineered for general-purpose switching tasks. The series offers various voltage ratings and packages to accommodate diverse circuit design constraints while maintaining consistent performance standards across the product line.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Direct replacements must match the 600 V rating, N-channel configuration, and SOT-223-4 footprint. Verify pinout compatibility and electrical parameters before implementation.