BSP170PE6327T

$0.27

Description：MOSFET P-CH 60V 1.9A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:af4ee5db3733 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP170PE6327T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.9A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP170PE6327T

Description：MOSFET P-CH 60V 1.9A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：410 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP170PE6327T

BSP170PE6327T

Single FETs, MOSFETs Overview

The BSP170PE6327T is a single P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage (Vds) of -60 V and a continuous drain current (Id) of 1.9 A. The device exhibits a maximum on-resistance (Rds(on)) of 260 mOhms at a gate-source voltage (Vgs) of -10 V. It operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 5 W. The component utilizes a SOT-223-4 surface-mount package.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robustness against inductive load switching events
dv/dt rated capability for high-speed switching applications
Logic level compatible with standard digital control interfaces

Single FETs, MOSFETs Applications

Motor control circuits
Power management modules
Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix E6327T corresponds to the required tape and reel packaging configuration. Confirm RoHS compliance status and AEC-Q101 automotive qualification requirements against project specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with 60 V blocking capability and low on-resistance is required. Ensure the thermal design accommodates the 5 W power dissipation limit. Verify that the SOT-223-4 package dimensions fit the available PCB footprint constraints.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family. It is designed for general-purpose switching applications requiring reliable performance in automotive and industrial environments. The E6327T designation indicates specific manufacturing and packaging attributes defined by the supplier.