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BSP170PL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.9A SOT223-4. Review the specifications below when checking this part for your BOM.
The BSP170PL6327HTSA1 is a P-channel power MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a drain-source voltage (Vdss) of -60 V and a continuous drain current (Id) of -1.9 A at 25°C. The device has a maximum gate-source voltage (Vgs) of ±20 V and operates within a junction temperature range of -55°C to +150°C. Packaged in a PG-SOT23 (SOT-23-3), it is qualified under the AEC-Q101 standard for automotive applications.
Verify the specific ordering suffix against official Infineon documentation to confirm packaging type and tape-and-reel specifications. Ensure the component meets the required AEC-Q101 automotive grade certification for your target application environment. Cross-reference the exact part number with manufacturer databases to avoid substitutions that may differ in electrical characteristics or package dimensions.
Select this component when a P-channel MOSFET with a 60 V rating and approximately 2 A current capacity is required in a SOT-23 footprint. Consider the thermal performance and on-resistance values relative to the expected load current. Verify compatibility with the driving logic levels and ensure the package size fits the available PCB real estate constraints.
This part belongs to Infineon's SIPMOS family of single FETs. The series offers various voltage and current ratings optimized for power switching applications. The BSP170 variant specifically targets medium-power requirements within the automotive and industrial sectors, providing a balance between switching speed and conduction losses in small packages.
Publicly confirmed substitute part numbers are not provided in the available source material. Consult official Infineon replacement guides or distributor cross-reference tools for verified equivalents.
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