BSP250,115

Single FETs, MOSFETs Overview

The BSP250,115 is a P-channel enhancement mode vertical D-MOS transistor manufactured by Nexperia. It is housed in a SOT-223 plastic surface-mount package with four leads. Key electrical parameters include a maximum drain-source voltage of -30 V and a continuous DC drain current of -3 A. The device features a low on-state resistance of 0.25 Ω at VGS = -10 V and ID = -1 A. Total power dissipation reaches 5 W at a case temperature of 100 °C. Gate-source voltage limits are ±20 V, and the junction temperature can operate up to 150 °C.

Single FETs, MOSFETs Feature Summary

• Vertical D-MOS technology provides high-speed switching capabilities without secondary breakdown.
• Very low on-resistance minimizes conduction losses in power applications.
• SOT-223 package includes an exposed collector pad designed for efficient heat transfer.

Single FETs, MOSFETs Applications

• Low-loss motor drivers
• Actuator drivers
• Power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the component matches the specific P-channel enhancement mode vertical D-MOS specification. Confirm the SOT-223 package type and pinout alignment with circuit requirements. Ensure static discharge precautions are observed during handling, as the gate-source input requires protection against electrostatic discharge. Cross-reference datasheet revisions to confirm compatibility with design constraints.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring moderate voltage ratings and high current handling in a compact surface-mount form factor. Evaluate thermal management needs based on the specified power dissipation limits and thermal resistance values. Consider the gate threshold voltage range to ensure proper logic level compatibility for driving the switch effectively within the intended operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the family of discrete semiconductor transistors produced by Nexperia. It utilizes vertical D-MOS architecture to achieve performance characteristics suitable for general-purpose power switching. The SOT-223 packaging standard facilitates automated assembly while providing a robust mechanical structure for thermal dissipation through the exposed drain pad.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Do not assume functional equivalence with other P-channel MOSFETs without verifying pinout, voltage ratings, and thermal specifications against the original design requirements.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum DC drain-source voltage (VDS) is rated at -30 V.

How is the device packaged?

The BSP250 is supplied in a SOT-223 plastic surface-mounted device package with four leads.

What is the typical total power dissipation?

Total power dissipation is 5 W when the case temperature is maintained at 100 °C.