BSP612PH6327XTSA1

Description：SMALL SIGNAL+P-CH
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:5f232e6d01d3 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSP612PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SMALL SIGNAL+P-CH. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP612PH6327XTSA1

Description：SMALL SIGNAL+P-CH
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for BSP612PH6327XTSA1

BSP612PH6327XTSA1

Single FETs, MOSFETs Overview

The BSP612PH6327XTSA1 is a P-channel OptiMOS-P small-signal MOSFET in the PG-SOT-223 package. It features a maximum drain-source voltage of -60 V and a continuous drain current of -3.0 A at 25 °C. The device operates in enhancement mode with logic-level compatibility rated at 4.5 V. Key electrical parameters include a maximum on-state resistance of 170 mΩ at VGS=-4.5 V and 120 mΩ at VGS=-10 V. It supports avalanche energy ratings and reverse diode operation, with a power dissipation capacity of 1.8 W.

Single FETs, MOSFETs Feature Summary

Logic-level gate threshold optimized for direct drive from standard digital interfaces.
Avalanche-rated construction capable of handling single-pulse energy events.
Integrated reverse diode supporting high dv/dt switching performance.

Single FETs, MOSFETs Applications

Low-side switching in automotive electronic control units
Load switching applications requiring logic-level interface
General-purpose power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 to confirm tape and reel packaging quantities and halogen-free compliance status. Ensure the component matches the PG-SOT-223 footprint dimensions during procurement validation. Cross-reference the manufacturer datasheet revision against the ordered batch to confirm static and dynamic parameter tolerances.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel solution with low on-resistance and logic-level drive capability is required. The -60 V rating provides sufficient headroom for 12 V automotive systems. Consider the thermal resistance values for PCB layout planning to ensure junction temperatures remain within the specified operating range under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS-P family, designed for efficient power switching in automotive and industrial environments. The SIPMOS technology integrates the gate structure within the silicon surface, reducing cell pitch and enhancing current density compared to older planar technologies.