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BSR316PL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 360MA SC59. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSR316PL6327HTSA1
- Description：MOSFET P-CH 100V 360MA SC59
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 360mA, 10V
- Vgs(th) (Max) @ Id：1V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：165 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SC59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSR316PL6327HTSA1
Single FETs, MOSFETs Overview
The BSR316PL6327HTSA1 is a P-channel GaN field-effect transistor manufactured by Infineon Technologies. It features a SOT-23-3 surface-mount package and supports a drain-source breakdown voltage of 100 V with a continuous drain current of 360 mA. The device has a maximum gate-source voltage of ±20 V, a gate charge of 7 nC, and an on-resistance of 1.3 ohms. It operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes Gallium Nitride (GaN) technology for enhanced performance characteristics compared to traditional silicon devices.
Single FETs, MOSFETs Applications
- Power management circuits requiring high-voltage switching capabilities.
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix L6327HTSA1 against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Confirm component availability status as distribution listings may indicate end-of-life or limited supply conditions. Ensure compatibility with required automotive or industrial qualification standards if applicable to the design.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel switch with 100 V rating is needed in a compact SOT-23-3 footprint. Consider the higher on-resistance relative to low-voltage MOSFETs. Verify that the 360 mA current limit meets the load requirements. Check thermal dissipation needs given the small package size.
Single FETs, MOSFETs Part Context
This part belongs to the BSR316 series of P-channel transistors. It represents Infineon's integration of GaN technology into standard small-signal packages. The HTSA1 suffix typically denotes automotive-grade qualification and specific reel packaging configurations defined by the manufacturer.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference tools for verified alternatives.
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