BSR58,215

BSR58,215

  • Description:JFET N-CH 40V SOT23
  • Series:-

SKU:60e6a4b80759 Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 40V SOT23
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):40 V
  • Current - Drain (Idss) @ Vds (Vgs=0):8 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:800 mV @ 0.5 nA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):60 Ohms
  • Power - Max:250 mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Grade:-
  • Qualification:-

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BSR58,215

Overview

The BSR58,215 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by NXP USA Inc. It is housed in a SOT23 surface-mount package with three terminals. The device operates in depletion mode and features a minimum drain-source breakdown voltage of 40 V. Key electrical characteristics include a maximum drain current of 0.02 A and a maximum drain-source on-resistance of 25 Ω. The component has a power dissipation rating of 0.25 W and a maximum feedback capacitance of 5 pF. It supports operating temperatures up to 150 °C and complies with RoHS standards.

Feature Summary

  • N-channel JFET technology for signal processing applications
  • Depletion mode operation suitable for analog switching
  • SOT23 surface-mount packaging for compact designs

Applications

  • Analog signal switching circuits
  • Low-noise amplifier input stages
  • Constant current source implementations

Procurement Notes

Verify the specific suffix 215 against official NXP documentation to confirm tape-and-reel packaging specifications. Ensure compliance requirements match project needs, as the component is RoHS compliant. Cross-reference the manufacturer part number with distributor listings to confirm availability status and lead times prior to ordering.

Selection Notes

Select this component when a low-voltage, low-current N-channel JFET is required for analog signal paths. The 40 V breakdown voltage and 25 Ω on-resistance define its operational limits. Consider the SOT23 package size for space-constrained PCB layouts. Verify thermal management capabilities given the 0.25 W power dissipation rating at elevated temperatures.

Part Context

The BSR58 belongs to the BSR series of N-channel JFETs from NXP. These devices are commonly used in analog electronics where low noise and high input impedance are critical. The BSR58 variant specifically offers a 40 V breakdown voltage, distinguishing it from other members of the family with different voltage ratings.

Replacement Considerations

Check for pin-compatible JFET alternatives with similar Vds and Id ratings if BSR58,215 is unavailable. Ensure substitute components meet the same SOT23 footprint and thermal performance criteria. Verify that replacement parts maintain comparable feedback capacitance for high-frequency signal integrity.

BSR58,215BSR58,215

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