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The BSR58,215 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by NXP USA Inc. It is housed in a SOT23 surface-mount package with three terminals. The device operates in depletion mode and features a minimum drain-source breakdown voltage of 40 V. Key electrical characteristics include a maximum drain current of 0.02 A and a maximum drain-source on-resistance of 25 Ω. The component has a power dissipation rating of 0.25 W and a maximum feedback capacitance of 5 pF. It supports operating temperatures up to 150 °C and complies with RoHS standards.
Verify the specific suffix 215 against official NXP documentation to confirm tape-and-reel packaging specifications. Ensure compliance requirements match project needs, as the component is RoHS compliant. Cross-reference the manufacturer part number with distributor listings to confirm availability status and lead times prior to ordering.
Select this component when a low-voltage, low-current N-channel JFET is required for analog signal paths. The 40 V breakdown voltage and 25 Ω on-resistance define its operational limits. Consider the SOT23 package size for space-constrained PCB layouts. Verify thermal management capabilities given the 0.25 W power dissipation rating at elevated temperatures.
The BSR58 belongs to the BSR series of N-channel JFETs from NXP. These devices are commonly used in analog electronics where low noise and high input impedance are critical. The BSR58 variant specifically offers a 40 V breakdown voltage, distinguishing it from other members of the family with different voltage ratings.
Check for pin-compatible JFET alternatives with similar Vds and Id ratings if BSR58,215 is unavailable. Ensure substitute components meet the same SOT23 footprint and thermal performance criteria. Verify that replacement parts maintain comparable feedback capacitance for high-frequency signal integrity.