BSS123,215

$0.20

Description：MOSFET N-CH 100V 150MA TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2442ae8bd8db Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSS123,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 100V 150MA TO236AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123,215

Description：MOSFET N-CH 100V 150MA TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：250mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123,215

BSS123,215

Single FETs, MOSFETs Overview

The BSS123,215 is an N-channel enhancement mode field-effect transistor manufactured by Nexperia using TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 150 mA at 25 °C. The device has a maximum on-state resistance of 6 Ω at VGS = 10 V. It operates within a junction temperature range of -55 °C to 150 °C and dissipates up to 0.25 W. The component is housed in a SOT23 surface-mount package.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary TrenchMOS technology for enhanced switching performance
Compatible with standard logic level inputs
Designed for subminiature surface mounting applications

Single FETs, MOSFETs Applications

Relay driver circuits
High-speed line drivers
Telephone ringer systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code BSS123,215 against official Nexperia documentation to confirm the SOT23 package and tape-and-reel quantity. Ensure static protection measures are implemented during handling due to gate sensitivity. Confirm that the intended operating conditions remain within the specified absolute maximum ratings to prevent permanent damage.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching tasks requiring logic-level compatibility. The SOT23 package suits space-constrained designs. Verify that the required drain current does not exceed 150 mA and that the thermal resistance allows for adequate heat dissipation within the 0.25 W power limit under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia discrete semiconductor portfolio, specifically the N-channel MOSFET category. It utilizes TrenchMOS technology, which optimizes the trade-off between on-resistance and switching speed. The device is designed for general-purpose switching in consumer and industrial electronics where compact packaging is essential.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia cross-reference lists for verified substitutes. Generic equivalents may differ in RDS(ON) limits or threshold voltages. Ensure any replacement maintains the SOT23 footprint and meets the 100 V VDSS requirement.