BSS123E6327

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c0a425b68da2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSS123E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123E6327

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id：1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：2.67 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：69 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123E6327

BSS123E6327

Single FETs, MOSFETs Overview

The Infineon BSS123E6327 is an N-channel enhancement mode logic level small-signal transistor in a SOT-23 package. It features a drain-source voltage of 100 V and a continuous drain current of 0.17 A at 28°C. The gate threshold voltage ranges from 0.8 to 2.0 V, with a maximum on-state resistance of 6 Ω at VGS=10V and ID=0.17A. Operating temperatures span -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Logic level operation enables direct drive from standard digital interfaces.
Enhancement mode design ensures reliable switching performance.
SOT-23 packaging supports compact surface-mount circuit layouts.

Single FETs, MOSFETs Applications

Low-side switching applications
Power management circuits
General-purpose amplification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required tape and reel configuration, as variants exist for different packaging formats. Confirm RoHS compliance status through official documentation before integration. Ensure thermal management aligns with the specified power dissipation limits under expected ambient conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low gate charge and fast switching speeds within a small footprint. Evaluate the on-resistance characteristics against load requirements to ensure efficient conduction. Consider the breakdown voltage margin relative to the maximum circuit operating voltage.

Single FETs, MOSFETs Part Context

This device belongs to the SIPMOS small-signal transistor family, designed for general-purpose switching and amplification tasks. It utilizes silicon technology optimized for cost-effective mass production while maintaining robust electrical performance standards for consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other N-channel MOSFETs offering similar 100V ratings and SOT-23 footprints if supply constraints arise. Verify pinout compatibility and electrical parameter overlaps to ensure seamless substitution without circuit redesign.