BSS123L7874XT

Single FETs, MOSFETs Overview

The BSS123L7874XT is an N-channel, enhancement-mode logic-level small-signal MOSFET from Infineon Technologies. It features a drain-source voltage rating of 100 V and a continuous drain current of 0.17 A at 25°C. The device has a maximum on-state resistance of 6 Ω at VGS = 10 V and 10 Ω at VGS = 4.5 V. Gate threshold voltage ranges from 0.8 V to 2.0 V. It operates within a junction temperature range of -55°C to +150°C and utilizes a SOT-23 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Logic-level gate drive capability for direct interfacing with standard digital logic circuits
• High breakdown voltage suitable for low-voltage switching applications
• Enhancement mode operation with defined threshold voltage range

Single FETs, MOSFETs Applications

• Low-side switching in industrial control systems
• Signal level shifting between different voltage domains
• Load switching in consumer electronic devices

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required tape and reel configuration, as datasheet references indicate distinct codes for bulk versus reel packaging. Confirm RoHS compliance status and lead times directly with authorized distributors or Infineon sales representatives prior to finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel switch with 100 V blocking capability is required. Ensure the application current remains below the 0.17 A continuous limit and consider thermal derating for ambient temperatures exceeding 25°C. Verify that the logic high output voltage of the driving circuit sufficiently exceeds the minimum gate threshold voltage for reliable conduction.

Single FETs, MOSFETs Part Context

This part belongs to the SIPMOS small-signal transistor family, designed for general-purpose switching tasks. It serves as a discrete alternative to integrated switches where specific voltage ratings or form factors are necessary. The technology focuses on providing robust performance in a minimal footprint for cost-sensitive designs.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other N-channel MOSFETs offering similar 100 V ratings and SOT-23 packages. Verify pinout compatibility (Gate, Source, Drain) and ensure replacement parts meet or exceed the original RDS(on) and VGS(th) specifications for equivalent circuit performance.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage allowed?

The absolute maximum rating for gate-source voltage is ±20 V.

How does the on-resistance vary with gate voltage?

The maximum on-resistance increases from 6 Ω at VGS = 10 V to 10 Ω at VGS = 4.5 V.