BSS123LT1G

$0.22

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ebcad345b453 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BSS123LT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123LT1G

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123LT1G

BSS123LT1G

Single FETs, MOSFETs Overview

The BSS123LT1G is a single N-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in a surface-mount SOT-23 package. It features a drain-source breakdown voltage of 100 Vdc and a continuous drain current rating of 0.17 Adc. The device exhibits a maximum static drain-source on-resistance of 6.0 Ohms at a gate-source voltage of 10 Vdc. Key electrical parameters include a gate threshold voltage of 1.6 Vdc and a forward transconductance of 80 mmhos. Thermal characteristics specify a total device dissipation of 225 mW at 25°C ambient temperature with a junction-to-ambient thermal resistance of 556 °C/W.

Single FETs, MOSFETs Feature Summary

HBM Class 0A and MM Class M1B electrostatic discharge protection ratings between the gate and source terminals.
Lead-free construction compliant with RoHS standards for environmental safety.
Enhanced channel mode operation designed for efficient switching applications.

Single FETs, MOSFETs Applications

General-purpose switching circuits requiring low power consumption.
Battery-powered portable electronic devices.
Automotive applications meeting AEC-Q101 qualification requirements (specifically BVSS prefix variants).

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required packaging format, such as tape and reel quantities. Confirm compliance documentation availability if project specifications demand material composition declarations or REACH statements. Ensure the component variant aligns with any site-specific control change requirements mandated by automotive quality standards.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with high voltage tolerance is required for low-current switching tasks. Evaluate the thermal resistance and power dissipation limits against the expected operating environment to ensure reliable performance. Consider the gate threshold voltage compatibility with the driving logic levels to guarantee proper turn-on characteristics within the circuit design.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's discrete semiconductor transistor lineup, specifically categorized under MOSFETs. It utilizes silicon technology and is manufactured in the SOT-23 form factor, which is widely used in space-constrained surface mount designs. The product line supports various industrial and consumer electronics applications requiring reliable switching capabilities.

Single FETs, MOSFETs Replacement Considerations

The BVSS123LT1G serves as an alternative variant within the same family, distinguished by its qualification for automotive applications and unique site control requirements. Both parts share identical electrical specifications and physical dimensions, allowing for potential interchangeability based on supply chain or certification needs.

Single FETs, MOSFETs FAQ

Does the ESD rating apply to all terminal pairs?

No, the HBM Class 0A and MM Class M1B ratings apply exclusively to the gate-to-source interface. There is no implied gate overvoltage rating beyond the specified continuous limits.