BSS131E6327

Description：MOSFET N-CH 240V 110MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:1916f683b47f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSS131E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 240V 110MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS131E6327

Description：MOSFET N-CH 240V 110MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：240 V
Current - Continuous Drain (Id) @ 25°C：110mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：1.8V @ 56µA
Gate Charge (Qg) (Max) @ Vgs：3.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：77 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS131E6327

BSS131E6327

Single FETs, MOSFETs Overview

The BSS131E6327 is an N-channel enhancement mode MOSFET from Infineon's SIPMOS® series, housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 240 V and a continuous drain current of 0.11 A at 25 °C. The device has a maximum on-state resistance of 14 Ω at VGS=10 V and a gate threshold voltage ranging from 0.8 V to 1.8 V. It supports a power dissipation of 0.36 W and operates within a temperature range of -55 °C to +150 °C. The component is qualified according to AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode logic level transistor
dv/dt rated for high-speed switching applications
Qualified according to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

Logic level switching
High-speed switching circuits
Automotive electronic systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix E6327 against official Infineon documentation to confirm tape and reel packaging details. Ensure the component meets AEC-Q101 qualification requirements if used in automotive contexts. Cross-reference the PG-SOT-23 footprint with design files to ensure compatibility with existing PCB layouts.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation up to 240 V in a compact surface-mount package. Consider the low gate threshold voltage for efficient drive from standard logic levels. Evaluate thermal performance based on the specified power dissipation and junction-to-ambient thermal resistance under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the BSS131 family of small-signal transistors manufactured by Infineon Technologies. It utilizes SIPMOS® technology, which is designed for robust performance in various switching applications. The E6327 suffix typically denotes specific packaging configurations available through distributors.