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BSS131IXUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is BSS131IXUSA1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS131IXUSA1
- Description：BSS131IXUSA1
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for BSS131IXUSA1
Single FETs, MOSFETs Overview
The BSS131IXUSA1 is a small-signal power transistor manufactured by Infineon Technologies. It is an N-channel enhancement-mode MOSFET designed for surface-mount applications. The device features a silicon technology base and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (Vds) of 240 V, a continuous drain current (Id) of 121 mA, and a gate-source voltage (Vgs) rating of 20 V. The typical on-resistance (Rds(on)) is 14 Ohms, with a gate charge (Qg) of 1.11 nC. Power dissipation is rated at 440 mW, and the threshold voltage (Vgs(th)) is specified at 1.8 V.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode operation for switching applications
- High drain-source breakdown voltage capability
- Surface-mount compatible SMD/SMT installation style
Single FETs, MOSFETs Applications
- General purpose switching circuits
- Level shifting in digital logic interfaces
- Small signal amplification stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix IXUSA1 against the manufacturer's official datasheet to confirm package type and tape/reel specifications. Ensure the component meets RoHS compliance requirements for your target assembly process. Cross-reference the Mouser part number 726-BSS131IXUSA1 with Infineon's ordering codes to validate authenticity and production status before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage N-channel MOSFET with low gate charge is required for small-signal applications. The 240 V rating suits higher voltage logic levels compared to standard 20 V devices. Consider the 14 Ohm on-resistance for efficiency in low-current switching scenarios where minimal conduction loss is not the primary constraint over voltage handling.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's small-signal power transistor portfolio. It utilizes silicon technology and is classified under single-channel MOSFETs. The device is distinct from automotive-qualified variants like the H6327 series, focusing on general industrial and consumer electronics applications requiring robust voltage handling in a compact form factor.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical ratings if considering alternative manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
