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BSS138AK-QR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOS DISCRETES. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS138AK-QR
- Description：MOS DISCRETES
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：250mA
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：0.21 nC @ 10 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS138AK-QR
Single FETs, MOSFETs Overview
The BSS138AK-Q is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in a SOT23 plastic surface-mounted package. It features a drain-source voltage of 60 V and a continuous drain current of 250 mA at 25 °C. The device supports an extended junction temperature range up to 175 °C and includes electrostatic discharge protection rated at 500 V (HBM). Key electrical characteristics include a maximum on-state resistance of 3 Ω at VGS = 10 V and a total gate charge of 0.315 nC.
Single FETs, MOSFETs Feature Summary
- Logic-level compatible for efficient drive requirements
- Extended thermal capability with junction temperature up to 175 °C
- Integrated electrostatic discharge protection
Single FETs, MOSFETs Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging configuration, as suffixes determine reel or cut tape formats. Ensure the component meets AEC-Q101 qualification requirements if intended for automotive-grade applications. Cross-reference the marking code J5% with manufacturing site codes during incoming inspection to validate authenticity and traceability.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring logic-level compatibility within a compact SOT23 footprint. The device is suitable for low-current switching tasks where an extended operating temperature range up to 175 °C is necessary. Consider the 60 V breakdown voltage and 250 mA current limits to ensure adequate headroom for the specific load conditions.
Single FETs, MOSFETs Part Context
This part belongs to Nexperia's BSS138AK series of N-channel Trench MOSFETs. The series utilizes advanced trench technology to achieve fast switching speeds and low on-state resistance. The product family is designed for general-purpose switching applications, offering reliability through AEC-Q101 qualification for automotive environments.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the BSS138AKS-Q and BSS138AKRA-Q variants from the same manufacturer, which share similar electrical specifications but may differ in package type or marking codes.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
