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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 230mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS138N-E6327 is an N-channel enhancement mode small-signal MOSFET from Infineon Technologies, utilizing SIPMOS® technology. It features a PG-SOT-23 package with a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device has a maximum on-state resistance of 3.5 Ω at VGS=10 V and ID=0.23 A. It operates within a temperature range of -55 °C to +150 °C and is qualified according to AEC-Q101 standards.
Feature Summary
- Logic level operation for direct microcontroller interfacing
- dv/dt rated capability for high-speed switching applications
- AEC-Q101 automotive qualification ensuring reliability in harsh environments
Applications
- Motor control circuits
- Power management systems
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix (E6327) against official Infineon documentation to confirm tape and reel packaging quantities and marking codes. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet. Confirm that the component meets the required AEC-Q101 automotive grade specifications for your intended application environment.
Selection Notes
Select this component when a compact N-channel MOSFET with logic-level drive compatibility is required. Consider its low gate charge and fast switching characteristics for efficiency. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance and power dissipation limits under your specific operating conditions.
Part Context
This part belongs to the BSS138 series of SIPMOS® small-signal transistors. It is designed for general-purpose switching and amplification tasks. The E6327 suffix typically denotes a specific packaging configuration, such as tape and reel, suitable for automated surface-mount assembly processes.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the N-channel enhancement mode type, SOT-23 package, and 60V/0.23A ratings. Verify that alternative components meet the same AEC-Q101 automotive qualification if required by your design.
