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Product Detailed Parameters
- Description：MOSFET P-CH 240V 200MA SOT89
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：240 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：12Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：90 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：560mW (Ta), 12.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-89
- Package / Case：TO-243AA
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Overview
The BSS192,135 is a P-channel vertical D-MOS transistor manufactured by Nexperia USA Inc. It operates with a drain-source voltage of -240 V and a continuous drain current of -200 mA at 25 °C. The device features a typical on-state resistance of 10 Ω at VGS = -10 V. Packaged in the SOT89 (SC-62) surface-mount plastic housing, it supports junction temperatures up to 150 °C and includes an integrated source-drain diode.
Feature Summary
- Direct interface capability with complementary CMOS and TTL logic devices
- Fast switching performance without secondary breakdown risks
- Robust thermal design via exposed die pad for efficient heat transfer
Applications
- Relay driver circuits
- High-speed line drivers
- High-side load switches
- General switching applications
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets RoHS compliance standards for the target market. Ensure the SOT89 footprint aligns with the PCB layout guidelines provided in the datasheet. Validate thermal management requirements against the specified junction-to-ambient resistance values.
Selection Notes
Select this component for high-voltage P-channel switching tasks requiring direct logic interfacing. Evaluate the on-state resistance characteristics against the specific load current requirements. Consider the thermal dissipation capabilities when designing for elevated ambient temperatures or enclosed environments.
Part Context
This part belongs to the BSS192 series of P-channel vertical D-MOS transistors. It utilizes the SOT89 package variant designed for medium power applications. The device represents a standard discrete semiconductor solution for general-purpose switching and amplification roles within electronic circuits.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters before implementation.
