BSS214NWH6327XTSA1

BSS214NWH6327XTSA1

$0.23
  • Description:MOSFET N-CH 20V 1.5A SOT323-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:8a23920ac85b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 20V 1.5A SOT323-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:140mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:143 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT323
  • Package / Case:SC-70, SOT-323

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BSS214NWH6327XTSA1

Overview

The BSS214NW H6327 XTSA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS™ 2 series, housed in a PG-SOT323-3 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 1.5 A at 25 °C. The device supports super logic level operation with a maximum on-resistance of 140 mΩ at VGS=4.5 V and 250 mΩ at VGS=2.5 V. It is avalanche rated with single-pulse energy capability of 3.7 mJ and qualified to AEC-Q101 standards for automotive applications.

Feature Summary

  • Super Logic Level Operation: Designed for efficient switching with low gate drive requirements, supporting 2.5 V rated operation.
  • Avalanche Rated Capability: Engineered to withstand single-pulse avalanche energy events without failure.
  • Automotive Qualification: Compliant with AEC-Q101 standards, ensuring reliability for demanding automotive environments.
  • High dv/dt Rating: Supports rapid reverse diode switching speeds up to 6 kV/µs.

Applications

  • Automotive electronic control units
  • Low-side power switching circuits
  • Logic-level interface drivers

Procurement Notes

Verify the complete part number including the H6327 suffix to ensure correct packaging configuration. Confirm RoHS compliance and halogen-free status against specific project requirements. Check for any recent product change notices regarding the PG-SOT323 package or manufacturing site changes before finalizing procurement orders.

Selection Notes

Select this component when a compact N-channel switch is required for 20 V systems with high switching frequency needs. The low gate charge and fast dynamic characteristics make it suitable for space-constrained designs. Ensure thermal management accounts for the 250 K/W junction-to-ambient resistance on minimal footprints.

Part Context

This component belongs to Infineon's OptiMOS™ 2 small-signal transistor family, optimized for low-voltage switching applications. The PG-SOT323 package provides a compact surface-mount solution suitable for automated assembly processes in consumer and industrial electronics.

Replacement Considerations

Direct substitutes include BSS214NXTSA1 and BSS214NH6327XTSA1, which share identical electrical specifications and pinout configurations within the same OptiMOS™ 2 family.

FAQ

What is the maximum single-pulse avalanche energy rating?

The device is rated for 3.7 mJ of single-pulse avalanche energy under conditions of ID=1.5 A and RGS=25 Ω.

Is this component suitable for automotive applications?

Yes, the BSS214NW is qualified according to the AEC-Q101 standard for automotive grade components.

BSS214NWH6327XTSA1BSS214NWH6327XTSA1
$0.23
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