SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BSS214NW H6327 XTSA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS™ 2 series, housed in a PG-SOT323-3 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 1.5 A at 25 °C. The device supports super logic level operation with a maximum on-resistance of 140 mΩ at VGS=4.5 V and 250 mΩ at VGS=2.5 V. It is avalanche rated with single-pulse energy capability of 3.7 mJ and qualified to AEC-Q101 standards for automotive applications.
Verify the complete part number including the H6327 suffix to ensure correct packaging configuration. Confirm RoHS compliance and halogen-free status against specific project requirements. Check for any recent product change notices regarding the PG-SOT323 package or manufacturing site changes before finalizing procurement orders.
Select this component when a compact N-channel switch is required for 20 V systems with high switching frequency needs. The low gate charge and fast dynamic characteristics make it suitable for space-constrained designs. Ensure thermal management accounts for the 250 K/W junction-to-ambient resistance on minimal footprints.
This component belongs to Infineon's OptiMOS™ 2 small-signal transistor family, optimized for low-voltage switching applications. The PG-SOT323 package provides a compact surface-mount solution suitable for automated assembly processes in consumer and industrial electronics.
Direct substitutes include BSS214NXTSA1 and BSS214NH6327XTSA1, which share identical electrical specifications and pinout configurations within the same OptiMOS™ 2 family.
The device is rated for 3.7 mJ of single-pulse avalanche energy under conditions of ID=1.5 A and RGS=25 Ω.
Yes, the BSS214NW is qualified according to the AEC-Q101 standard for automotive grade components.