BSS670T116

Overview

The BSS670T116 is a single N-channel enhancement-mode MOSFET manufactured by ROHM Semiconductor. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 650mA. The device utilizes an SST3 (SOT-23) surface-mount package with integrated ESD protection diodes. Key electrical parameters include a maximum gate-source voltage of ±20V, a power dissipation rating of 350mW, and an operating temperature range from -55°C to +150°C. The component is designed for high-speed switching applications.

Feature Summary

• Integrated ESD protection diodes within the SST3 package
• High-speed switching capability for efficient circuit operation
• Single N-channel configuration suitable for low-side load switching

Applications

• Low-side load switch circuits
• Relay driver applications
• General-purpose switching circuits

Procurement Notes

Verify the specific ordering suffix T116 to confirm the reel packaging format and quantity. Ensure compatibility with the SST3 footprint during PCB layout. Confirm RoHS compliance status through official documentation before integration into regulated assemblies.

Selection Notes

Select this component for designs requiring compact N-channel switching with built-in electrostatic discharge protection. The 60V rating provides adequate headroom for standard logic-level systems. Evaluate thermal management requirements based on the 350mW power dissipation limit in the small outline package.

Part Context

This part belongs to ROHM's BSS670 series of small-signal power MOSFETs. The series focuses on providing robust performance in minimal footprints. The T116 suffix denotes the specific tape-and-reel packaging variant distributed by authorized channels.

Replacement Considerations

Consult official substitution guides for pin-compatible alternatives. Verify that any replacement maintains the N-channel polarity, 60V voltage rating, and SST3 package dimensions to ensure mechanical and electrical interchangeability.