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Product Detailed Parameters
- Description：MOSFET P-CH 60V 330MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：330mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 330mA, 10V
- Vgs(th) (Max) @ Id：2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs：3.57 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS83PL6327HTSA1 is a P-channel enhancement mode MOSFET from Infineon Technologies, housed in a PG-SOT23 (SOT-23-3) surface-mount package. It features a drain-source voltage of 60V and a continuous drain current of 330mA at 25°C. The device has a maximum power dissipation of 360mW and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 3.57 nC at 10V, an input capacitance of 78 pF at 25V, and a threshold voltage of 2V at 80µA. It carries AEC-Q101 automotive qualification.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards for robust performance in vehicle electronics.
- P-channel enhancement mode architecture designed for efficient switching applications.
- Compact SOT-23-3 surface-mount packaging suitable for space-constrained circuit designs.
Applications
- Automotive electronic systems requiring qualified semiconductor components
- Low-side or high-side switching circuits utilizing P-channel topology
- General-purpose discrete transistor applications within specified voltage and current limits
Procurement Notes
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm specific ordering suffixes match required tape-and-reel quantities. Cross-reference datasheet revisions to ensure parameter consistency with design specifications. Validate automotive grade certification documentation if required for final assembly compliance.
Selection Notes
Select this component for applications requiring a 60V P-channel MOSFET with automotive qualification. Ensure the 330mA current rating meets load requirements. Consider the SOT-23-3 footprint constraints during PCB layout. Verify that the 360mW power dissipation capability aligns with thermal management strategies in the target environment.
Part Context
This part belongs to the BSS83 series of P-channel MOSFETs manufactured by Infineon Technologies. It utilizes SIPMOS technology and is designed for general-purpose switching. The component is distinct from N-channel variants and other packages within the broader MOSFET family, specifically tailored for low-current, low-voltage automotive and industrial applications.
Replacement Considerations
Public sources indicate the BSS83PL6327HTSA1 is obsolete. No verified public substitute part numbers are provided in the available documentation. Consult manufacturer resources for potential alternative components meeting identical electrical and mechanical specifications.
