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Product Detailed Parameters
- Description：MOSFET SOT-23 P Channel 50V
- Series：SOT-23
- Mfr：MDD
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：8Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.77 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The MDD BSS84 is a P-channel enhancement mode MOSFET housed in an SOT-23 surface-mount package. It features a drain-source voltage rating of -50V and a continuous drain current of -130mA. The device exhibits a maximum power dissipation of 225mW at 25°C ambient temperature. Gate-source voltage limits are specified at +/-20V, with a gate threshold voltage ranging from -0.9V to -2.0V. On-resistance values are 10Ω at VGS=-5V and 8Ω at VGS=-10V, both measured at ID=-0.1A. Operating junction temperatures extend up to +150°C.
Feature Summary
- Miniature surface mount package designed to save board space
- Low threshold voltage for efficient switching applications
- High-speed switching capability suitable for portable products
Applications
- Load switching in battery-powered products
- Power management in cellular and cordless telephones
- DC/DC converter circuits
Procurement Notes
Verify the specific marking code on the component case, as different markings correspond to distinct specifications within this product line. Confirm that the supplier provides documentation matching the NextGen Components specification sheet N0909-SOT23BSS84S0PD. Ensure compliance requirements such as RoHS/RoHS III are explicitly stated in the purchase order details before finalizing procurement.
Selection Notes
Select this component when designing low-voltage, low-current switching circuits requiring a compact footprint. The P-channel configuration is appropriate for high-side load switching applications. Evaluate the thermal resistance characteristics against the expected power dissipation in the target environment to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to the SMD Plastic-Encapsulate MOSFETs SOT-23 series manufactured by MDD. It serves as a single-channel discrete transistor solution for general-purpose switching tasks. The component utilizes silicon technology and is packaged in tape and reel format for automated assembly processes.
Replacement Considerations
Cross-reference part numbers include Nexperia BSS84, ON Semiconductor BSS84LT1G, Diodes Incorporated BSS84Q-7-F, ROHM Semiconductor BSS84T116, and Taiwan Semiconductor BSS84 RFG.
