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Product Detailed Parameters
- Description：MOSFET P-CH 50V 180MA TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84AKVL is a single P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia USA Inc. It utilizes Trench MOSFET technology to achieve low on-resistance and fast switching speeds within an ultra-small DFN1110D-3 (SOT8015) surface-mount package. The device is rated for a drain-source breakdown voltage of 50 V and supports a continuous drain current of 270 mA. Key electrical parameters include a maximum on-resistance of 7.5 Ohms, a gate-source voltage limit of -20 V, and a power dissipation capacity of 960 mW. It operates across a temperature range of -55°C to +150°C and holds AEC-Q101 automotive qualification.
Feature Summary
- Trench MOSFET technology enables logic-level compatibility and very fast switching performance.
- Ultra-small and flat lead DFN1110D-3 package provides high board space efficiency.
- Automotive qualified to AEC-Q101 standards for enhanced reliability in harsh environments.
Applications
- High-side load switching
- Relay driver circuits
- High-speed line drivers
Procurement Notes
Verify the specific suffix 'VL' against the official Nexperia datasheet to confirm tape-and-reel packaging specifications and moisture sensitivity level. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Confirm RoHS compliance status and REACH registration details prior to final procurement to meet regulatory requirements.
Selection Notes
Select this component for designs requiring a compact P-channel switch with moderate current handling capabilities. The 7.5 Ohm on-resistance suits low-power applications where minimal voltage drop is not critical. Verify that the thermal management strategy accommodates the 960 mW dissipation rating in the small DFN1110D-3 package under expected operating conditions.
Part Context
This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for space-constrained electronics. The BSS84 series leverages trench technology to offer improved switching characteristics compared to standard planar devices. It serves as a discrete solution for power management functions in consumer and automotive electronics where size and cost are primary design constraints.
Replacement Considerations
Direct substitutes may include other single P-channel MOSFETs in SOT-23 or similar small packages with comparable 50V ratings. Verify pinout compatibility and thermal resistance values when cross-referencing with alternative manufacturers' components to ensure functional equivalence.
