BSS84PL6327HTSA1

$0.05

Description：MOSFET P-CH 60V 170MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:9b37c3a2d499 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 170MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id：2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

BSS84PL6327HTSA1

Overview

The BSS84PL6327HTSA1 is a dual N-channel MOSFET manufactured by Infineon Technologies, designed for low-voltage switching applications. It features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 880 mA. The device exhibits a maximum on-resistance (Rds(on)) of 270 mΩ at Vgs = 10 V and 373 mΩ at Vgs = 4.5 V. Key electrical parameters include a gate charge (Qg) of 260 pC, a threshold voltage (Vgs(th)) of 550 mV, and a power dissipation (Pd) of 500 mW. It operates within a temperature range of -55°C to +150°C and is housed in an SOT-363-6 package.

Feature Summary

Dual N-channel configuration integrated into a single compact package for space-efficient circuit design.
Optimized for low-voltage switching with enhanced efficiency through minimized on-resistance characteristics.
Automotive-grade reliability compliant with AEC-Q100 qualification standards for robust performance.

Applications

Low-voltage load switching in automotive electronic systems
General-purpose switching applications requiring dual channel control
Power management circuits in consumer electronics

Procurement Notes

Verify the specific ordering suffix and packaging type against official Infineon documentation to ensure compatibility with automated assembly processes. Confirm that the component meets all required environmental and quality standards, such as AEC-Q100, for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required for low-voltage applications. Ensure the design accommodates the 20 V drain-source voltage limit and 880 mA current rating. Consider the SOT-363-6 package dimensions for PCB layout constraints and verify thermal management requirements based on the 500 mW power dissipation specification.

Part Context

This part belongs to Infineon's portfolio of surface-mount MOSFETs, specifically tailored for automotive and industrial markets. It utilizes silicon technology and is designed to replace older discrete solutions by integrating two channels into one footprint, thereby reducing board space and simplifying assembly processes for manufacturers.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference tools or datasheets for verified alternatives if this specific part number is unavailable.