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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84TA is a P-Channel Enhancement Mode Vertical DMOS FET manufactured by Diodes Incorporated. It features a SOT-23-3 surface-mount package with a drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 130 mA at 25°C. The device exhibits a gate-source threshold voltage of 2 V @ 1 mA and a maximum on-resistance (Rds On) of 10 Ω @ 100 mA, 5 V. Power dissipation is rated at 300 mW. Operating temperature ranges from -55°C to +150°C junction temperature. It is qualified to AEC-Q101 standards.
Feature Summary
- Designed for low on-state resistance while maintaining superior switching performance.
- Features low gate threshold voltage and low input capacitance for efficient control.
- Qualified to AEC-Q101 standards for high reliability in automotive applications.
- Totally lead-free and fully RoHS compliant.
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify component authenticity through authorized channels. Confirm the specific suffix matches the required package and qualification standards. Check for obsolescence status as some variants may be discontinued. Ensure environmental compliance documentation aligns with project requirements. Validate datasheet revisions against current manufacturing specifications.
Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with moderate voltage ratings. The SOT-23-3 package suits space-constrained designs. Consider the 130 mA current limit for load requirements. Verify thermal management capabilities given the 300 mW power dissipation rating in the specified package.
Part Context
This part belongs to the BSS84 family of P-Channel Enhancement Mode Field Effect Transistors. It is designed to minimize on-state resistance while maintaining fast switching speeds. The series is intended for high-efficiency power management and general-purpose switching applications in consumer and industrial electronics.
Replacement Considerations
Direct substitutes include BSS84-7-F. Other equivalents may include parts from Nexperia or onsemi within the same family. Verify pinout compatibility and electrical parameters before substitution.
