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Product Detailed Parameters
- Description：MOSFET N-CH 25V 31A/40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：31A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.45mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 12 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
BSZ014NE2LS5IFATMA1 is an N-channel surface-mount MOSFET from the OptiMOS™ series. It features a 25 V drain-source voltage rating and operates within a junction temperature range of -55°C to 150°C. The device provides continuous drain currents of 31 A at ambient temperature and 40 A at case temperature. Key electrical parameters include a maximum gate-source voltage of ±16 V, a typical gate charge of 33 nC at 10 V, and a maximum input capacitance of 2300 pF at 12 V.
Feature Summary
- OptiMOS™ technology integration for optimized power performance
- Monolithically integrated body Schottky diode
- Surface-mount PG-TSDSON-8-FL package design
Applications
- Or-ing switches
- Load switching applications
- High-performance power management circuits
Procurement Notes
Verify the specific suffix IFATMA1 against official Infineon documentation to confirm exact tape-and-reel specifications and lot traceability requirements. Ensure compatibility with standard SMT assembly processes for the PG-TSDSON-8-FL package. Cross-reference thermal dissipation limits with your specific PCB layout and cooling strategy before finalizing procurement quantities.
Selection Notes
Select this component when a compact N-channel MOSFET with low gate charge is required for efficient switching in 25 V systems. The integrated Schottky diode simplifies circuit topology by eliminating external components. Consider the thermal resistance characteristics and the specific current derating curves relative to your operating ambient or case temperatures during the design phase.
Part Context
This part belongs to Infineon's BSZ series of OptiMOS™ power MOSFETs. These devices are engineered for high efficiency and reliability in automotive and industrial environments. The OptiMOS™ portfolio utilizes advanced silicon technologies to minimize conduction losses while maintaining robust avalanche capabilities and fast switching speeds.
Replacement Considerations
Consult official Infineon replacement guides for verified cross-references. Do not substitute based solely on pinout compatibility; verify all electrical ratings and thermal characteristics.
