BSZ021N04LS6ATMA1

$1.14

Description：MOSFET N-CH 40V 25A/40A TSDSON
Series：OptiMOS™ 6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:62f944371aef Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 25A/40A TSDSON
Series：OptiMOS™ 6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-34
Package / Case：8-PowerVDFN

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BSZ021N04LS6ATMA1

Overview

The BSZ021N04LS6ATMA1 is an OptiMOS6 N-channel power transistor with a 40 V drain-source voltage rating. It features a maximum on-resistance of 2.1 mΩ at 10 V gate drive and 3.0 mΩ at 4.5 V. The device supports a continuous drain current of 147 A at 25°C case temperature and handles pulsed currents up to 588 A. Total gate charge is 31 nC at 10 V and 15 nC at 4.5 V, with an output charge of 34 nC. Thermal resistance from junction to case is 1.8 °C/W, and the operating temperature range extends from -55 °C to 175 °C.

Feature Summary

Optimized for synchronous rectification applications
Superior thermal resistance characteristics
100% avalanche tested for robustness

Applications

Synchronous rectification in DC-DC converters
Powertrain systems
Automotive electronics

Procurement Notes

Verify the specific ordering code suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the PG-TSDSON-8 FL package dimensions align with your PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when low on-resistance and high current handling are required in compact surface-mount designs. The logic-level gate threshold allows efficient drive from standard microcontrollers or dedicated drivers while maintaining high efficiency in synchronous topologies.

Part Context

This part belongs to the OptiMOS6 family of power transistors designed by Infineon Technologies. It utilizes advanced silicon technology to achieve high performance within the PG-TSDSON-8 FL package, targeting automotive and industrial power management applications requiring high reliability.