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The BSZ035N03MSGATMA1 is an N-channel OptiMOS 3 M-Series power MOSFET with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 3.5 mΩ at VGS=10 V and 4.3 mΩ at VGS=4.5 V. The device supports a continuous drain current of 113 A at TC=25°C and a pulsed current of 452 A. Total gate charge is typically 74 nC at VGS=10 V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PG-TSDSON-8 package.
Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure that the component designation matches the exact datasheet revision required for your design specifications. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.
Select this component when designing for 5V logic-level driving requirements in compact power stages. The low RDS(on) at VGS=4.5 V makes it suitable for efficient operation with standard logic controllers. Consider the thermal resistance characteristics and package size constraints when evaluating suitability for space-limited PCB layouts requiring high current handling capabilities.
This component belongs to Infineon's OptiMOS 3 M-Series portfolio, which focuses on low-voltage power switching solutions. The series targets applications demanding high efficiency and fast switching speeds. The PG-TSDSON-8 package provides a compact footprint while maintaining robust thermal performance for surface-mount assembly processes.
BSZ035N03MS G