BSZ035N03MSGATMA1

BSZ035N03MSGATMA1

$1.29
  • Description:MOSFET N-CH 30V 18A/40A 8TSDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:903c25d42777 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 18A/40A 8TSDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 69W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TSDSON-8
  • Package / Case:8-PowerTDFN

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BSZ035N03MSGATMA1

Overview

The BSZ035N03MSGATMA1 is an N-channel OptiMOS 3 M-Series power MOSFET with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 3.5 mΩ at VGS=10 V and 4.3 mΩ at VGS=4.5 V. The device supports a continuous drain current of 113 A at TC=25°C and a pulsed current of 452 A. Total gate charge is typically 74 nC at VGS=10 V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PG-TSDSON-8 package.

Feature Summary

  • Optimized for 5V driver applications such as notebooks, VGA circuits, and point-of-load converters
  • Features low figure of merit for switching (FOMSW) suitable for high-frequency SMPS designs
  • Includes 100% avalanche testing for enhanced reliability under transient conditions

Applications

  • Notebook power management systems
  • Video graphics array (VGA) circuitry
  • Point-of-load (POL) converter modules

Procurement Notes

Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure that the component designation matches the exact datasheet revision required for your design specifications. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when designing for 5V logic-level driving requirements in compact power stages. The low RDS(on) at VGS=4.5 V makes it suitable for efficient operation with standard logic controllers. Consider the thermal resistance characteristics and package size constraints when evaluating suitability for space-limited PCB layouts requiring high current handling capabilities.

Part Context

This component belongs to Infineon's OptiMOS 3 M-Series portfolio, which focuses on low-voltage power switching solutions. The series targets applications demanding high efficiency and fast switching speeds. The PG-TSDSON-8 package provides a compact footprint while maintaining robust thermal performance for surface-mount assembly processes.

Replacement Considerations

BSZ035N03MS G

BSZ035N03MSGATMA1BSZ035N03MSGATMA1
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