BSZ065N03LSATMA1

Overview

The BSZ065N03LSATMA1 is an N-channel OptiMOS Power-MOSFET in a PG-TSDSON-8 FL package. It features a drain-source voltage of 30 V and a maximum on-resistance of 6.5 mΩ at VGS=10V, or 8.6 mΩ at VGS=4.5V. The device supports a continuous drain current of 49 A at TC=25°C with VGS=10V. Key dynamic parameters include a total gate charge of 10 nC (at VGS=10V) and a reverse transfer capacitance of 40 pF. Thermal resistance from junction to case is 4.9 K/W, while junction-to-ambient is 60 K/W.

Feature Summary

• Optimized for high-performance Buck converters in server and VGA applications
• Very low figure of merit Qoss for high-frequency switching power supplies
• Low figure of merit FOMSW for high-frequency SMPS operation
• Excellent gate charge multiplied by RDS(on) product

Applications

• High-performance Buck converters
• Server power supply designs
• VGA power management circuits
• High-frequency switching power supplies

Procurement Notes

Verify the specific ordering code suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component meets RoHS compliance and halogen-free requirements as defined in IEC61249-2-21 standards before final procurement integration.

Selection Notes

Select this component when designing for low conduction losses at both 10V and 4.5V gate drive levels. The TSDSON-8 FL package provides superior thermal resistance compared to standard packages. Verify that the 30V breakdown voltage aligns with the target circuit's operating range and transient conditions.

Part Context

This part belongs to the OptiMOS family of silicon N-channel power MOSFETs manufactured by Infineon Technologies. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds within a compact surface-mount footprint designed for efficient heat dissipation.

Replacement Considerations

BSZ065N03LS