BSZ0909NDXTMA1

Overview

The BSZ0909NDXTMA1 is a dual N-channel Power MOSFET from Infineon’s OptiMOS series, housed in an 8-PowerVDFN (PG-WISON-8) surface-mount package. It features a drain-source voltage of 30 V and a continuous drain current of 20 A at case temperature. The device exhibits a maximum on-resistance of 18 mΩ at 10 V gate drive and 25 mΩ at 4.5 V. Key electrical parameters include a gate charge of 2.6 nC at 4.5 V, input capacitance of 360 pF at 15 V, and a threshold voltage range up to 2 V. It operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 17 W.

Feature Summary

• Dual N-channel configuration integrated into a compact PG-WISON-8 package for space-constrained designs.
• Optimized logic-level gate drive capability allowing efficient switching with standard low-voltage control signals.
• Low thermal resistance structure supporting high-power density applications in small form factors.

Applications

• Wireless charging transmitters and receivers compliant with Qi and AirFuel standards
• DC-DC converter stages in portable electronic devices
• Power management circuits in battery-powered equipment

Procurement Notes

Verify the component status as discontinued or obsolete through official Infineon channels before finalizing design-in decisions. Confirm that the PG-WISON-8 package dimensions match the target PCB footprint exactly. Ensure that the specific tape-and-reel packaging variant aligns with automated assembly requirements. Cross-reference the exact suffix XTMA1 to guarantee material compliance and traceability standards are met for the intended production run.

Selection Notes

Select this component when a dual N-channel topology is required within a minimal footprint. The 30 V rating suits low-voltage DC systems. Evaluate the 18 mΩ on-resistance against thermal constraints for the expected load current. Consider the 2.6 nC gate charge for driving capabilities in high-frequency switching environments. Compare thermal performance metrics against alternative packages if higher power dissipation is anticipated.

Part Context

This part belongs to Infineon’s OptiMOS family, which focuses on low-loss power switching solutions. The BSZ0909NDXTMA1 specifically addresses the need for integrated dual-channel control in compact power stages. It complements other discrete MOSFETs by offering reduced board space and simplified layout requirements for synchronous rectification or half-bridge configurations in consumer electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with any potential replacements by matching the 30 V rating, 20 A current capacity, and PG-WISON-8 package specifications precisely.