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Product Detailed Parameters
- Description：MOSFET N-CH 40V 11A/40A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 35W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
The BSZ105N04NSGATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 3 series. It features a 40 V drain-source voltage rating and a maximum continuous drain current of 40 A at 25 °C. The device exhibits a typical on-resistance of 10.5 mΩ at 10 V gate drive. Packaged in a surface-mount TSDSON-8 configuration with eight pins, it supports power dissipation up to 35 W. The component operates within a temperature range of -55 °C to +150 °C and utilizes silicon technology.
Feature Summary
- OptiMOS 3 technology providing optimized performance for low-voltage applications
- Single N-channel configuration with enhanced mode operation
- TSDSON-8 surface-mount package design for efficient thermal management
Applications
- Low-side switching in DC-DC converter circuits
- Motor control systems requiring robust N-channel switching
- General-purpose power switching in industrial equipment
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging and tape-and-reel specifications match your assembly requirements. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Check for any recent lifecycle updates or recommended new design notices to avoid obsolescence risks during production planning.
Selection Notes
Select this component when a 40 V rating and 40 A continuous current capacity are required in a compact TSDSON-8 footprint. The 10.5 mΩ on-resistance offers a balance between conduction losses and cost for standard logic-level gate drives. Ensure thermal design accommodates the 35 W power dissipation limit under expected operating conditions.
Part Context
This part belongs to the OptiMOS 3 family of power MOSFETs designed by Infineon Technologies. The series targets low-voltage applications where efficiency and switching speed are critical. The TSDSON-8 package provides a small form factor suitable for dense PCB layouts while maintaining adequate thermal performance for moderate power levels.
Replacement Considerations
Cross-reference with other OptiMOS 3 devices such as BSC054N04NSGATMA1 or BSZ165N04NS-G for alternative current ratings. Verify pinout compatibility and thermal resistance values before substituting to ensure circuit integrity.
