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The BT131-600,116 is a four-layer bidirectional triac thyristor manufactured by WeEn Semiconductors. It features an RMS on-state current (It RMS) of 1 A and a non-repetitive peak on-state current of 13.7 A. The device supports a rated repetitive off-state voltage (VDRM) of 600 V with a maximum off-state leakage current of 100 uA at VDRM. Key electrical parameters include an on-state voltage of 1.2 V, a maximum holding current (Ih) of 5 mA, a gate trigger voltage (Vgt) of 700 mV, and a gate trigger current (Igt) of 3.8 mA. It operates within a temperature range of -40 C to +125 C and utilizes a TO-92-3 through-hole package.
Verify the specific suffix '116' against official WeEn Semiconductors documentation to confirm tape and reel specifications or environmental compliance status. Ensure that the ordering information matches the required package variant and regulatory standards before finalizing procurement orders.
Select this component when a 1 A RMS current rating and 600 V blocking voltage are sufficient for the application. Consider the TO-92-3 package constraints for PCB layout and thermal dissipation requirements compared to higher current surface mount alternatives.
This part belongs to the BT131 series of general-purpose triacs from WeEn Semiconductors. The series offers various voltage ratings, with the 600 V variant providing a balance between voltage handling and cost-effectiveness for standard mains voltage applications.
Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material.