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The BT136-600/DG,127 is a four-quadrant sensitive gate triac manufactured by WeEn Semiconductors. It features a rated on-state RMS current of 4 A and a repetitive peak off-state voltage of 600 V. The device operates within a junction temperature range of -40°C to +125°C. Key electrical parameters include a maximum holding current of 10 mA, a non-repetitive peak on-state current of 27 A, and an on-state voltage of 1.4 V. Gate triggering specifications specify a maximum gate trigger voltage of 700 mV and a maximum gate trigger current of 5 mA. The component utilizes a TO-220AB-3 through-hole package.
Verify the specific suffix /DG against official manufacturer documentation to confirm pinout orientation and isolation characteristics relative to standard variants. Ensure the ordering part number matches the exact datasheet revision required for your design. Cross-reference the TO-220AB-3 package dimensions with your PCB footprint library prior to procurement to prevent assembly errors.
Select this component when a 4 A RMS current rating and 600 V blocking voltage are required for AC load switching. The sensitive gate characteristic allows for low-power drive signals from digital logic without additional amplification. Consider the TO-220AB-3 package for applications requiring robust mechanical mounting and effective heat dissipation via a heatsink.
This device belongs to the BT136 series of thyristors produced by WeEn Semiconductors. The series is widely utilized in general-purpose AC power control applications. The BT136-600 variant specifically denotes the 600 V voltage class within this family, distinguishing it from other ratings such as 500 V or 800 V models available in the same product line.
Compatible substitutes include the BT136-600D,127 and BT136X-600D,127. Verify that alternative packages maintain identical pin configurations and thermal performance metrics before implementation.