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The BTN7971BAUMA1 is a fully integrated high-current half-bridge power block from the Infineon NovalithIC family. It combines one P-channel high-side MOSFET and one N-channel low-side MOSFET with an integrated driver IC in a single package. The device utilizes vertical MOS technology for optimum on-state resistance, eliminating the need for a charge pump due to the P-channel high-side switch. It features logic level inputs, current sense diagnosis, adjustable slew rates, and dead time generation. Key electrical parameters include a minimum peak current capability of 50 A, typical path resistance of 16 mΩ at 25°C, typical quiescent current of 7 µA at 25°C, PWM capability up to 25 kHz, and operation down to 4.5 V.
Verify the specific suffix 'AUMA1' against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure the procurement source provides valid RoHS compliance documentation. Cross-reference the ordering code with Infineon's current product status to avoid obsolete stock. Confirm that the supply chain adheres to automotive quality standards if the application requires it.
Select this component for applications requiring high peak current handling with minimal board space consumption. The integrated P-channel switch simplifies gate drive design by removing the need for external charge pumps. Consider the 16 mΩ typical path resistance for efficiency calculations. The 25 kHz PWM capability supports standard motor control frequencies. Evaluate the 4.5 V minimum operating voltage against the system's power supply range.
The BTN7971BAUMA1 belongs to the NovalithIC family of intelligent power switches designed for automotive and industrial motor control. It is part of the TRILITH/NOVALITH series, which integrates power and control functions into a single robust package. This family targets cost-optimized solutions for protected high-current PWM motor drives, offering high reliability and advanced diagnostic features suitable for safety-critical automotive environments.
Public confirmed substitute part numbers are not available in the provided source material. Verify direct replacements through Infineon's official cross-reference tools. Do not assume functional equivalence with other NovalithIC devices without detailed parameter comparison.
No, the integration of a P-channel high-side MOSFET eliminates the need for an external charge pump, thereby minimizing electromagnetic interference (EMI).
The typical path resistance is 16 mΩ at 25°C, ensuring low power loss during operation.
It employs switched mode current limitation to reduce power dissipation during overcurrent events and includes shutdown protection against overcurrent and short circuits.