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Product Detailed Parameters
- Description：MOSFET N-CH 50V 15.5A TO220AB
- Series：TEMPFET®
- Mfr：Infineon Technologies
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：15.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V
- Rds On (Max) @ Id, Vgs：120mOhm @ 7.8A, 4.5V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：735 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BTS115ANKSA1 is a N-channel enhancement mode power MOSFET featuring an integrated temperature sensor with thyristor characteristics. It operates within a drain-source voltage range of 50 V and supports a continuous drain current of 15.5 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.12 Ω at VGS = 4.5 V. It utilizes a TO-220AB package where the drain pin is electrically shorted to the tab, facilitating efficient thermal management.
Feature Summary
- Logic level compatible gate drive for direct microcontroller interfacing
- Integrated temperature sensor utilizing thyristor switching behavior
- Drain pin electrically connected to the mounting tab
Applications
- High-side load switching applications
- Short-circuit protection circuits
- Automotive electronic control units
Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm the exact package variant and manufacturing revision. Ensure that the component meets the required automotive qualification standards if deployed in vehicle systems. Cross-reference the datasheet edition date with procurement records to validate technical specifications.
Selection Notes
Select this component when a logic-level interface is required alongside built-in thermal monitoring capabilities. The integrated thyristor sensor allows for direct over-temperature detection without external circuitry. Evaluate the thermal resistance parameters relative to the intended heat sinking strategy to ensure safe operating temperatures under continuous load conditions.
Part Context
This part belongs to the TEMPFET family of power semiconductors designed by Infineon Technologies. These devices combine standard MOSFET functionality with embedded diagnostic features. The integration of a temperature sensor directly into the silicon die enables robust system protection and simplifies the overall design architecture for industrial and automotive power management solutions.
Replacement Considerations
Consult official replacement lists for verified substitutes. Generic cross-references may not match the integrated sensor specifications or electrical tolerances.
