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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：TEMPFET®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V
- Rds On (Max) @ Id, Vgs：60mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BTS131E3045ANTMA1 is an N-channel power MOSFET from Infineon Technologies, designed for high-current switching applications. It features a maximum drain-source breakdown voltage of 50V and supports a continuous drain current of 25A. The device exhibits a typical on-state resistance of 60mΩ at 12A, ensuring efficient power handling with minimal conduction losses. Packaged in a D2PAK (TO-263) format, it offers robust thermal performance suitable for surface-mount assembly. Key electrical characteristics include a gate-source voltage range of ±20V and a power dissipation capacity of 75W, making it appropriate for automotive and industrial load driving tasks.
Feature Summary
- N-channel enhancement mode construction for low-side switching
- Integrated thermal protection mechanisms to prevent overheating
- Low on-state resistance for improved energy efficiency
- Robust package design for effective heat dissipation
Applications
- Automotive lighting systems
- Industrial motor control circuits
- General-purpose load switching
Procurement Notes
Verify the exact suffix and marking against official Infineon documentation to confirm the specific tape-and-reel packaging variant. Ensure compatibility with standard surface-mount reflow profiles. Confirm RoHS compliance status through the manufacturer's latest environmental declaration, as legacy batches may differ. Cross-reference the full part number with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a 50V rating and 25A continuous current capability are required for low-side switching. The D2PAK package is ideal for applications needing higher current density than smaller SMD packages. Consider the 60mΩ on-resistance for thermal management calculations. Ensure the gate drive voltage aligns with the specified ±20V limit for reliable operation.
Part Context
This device belongs to Infineon's broad portfolio of power MOSFETs, often utilized in automotive electronics due to its ruggedness. It serves as a discrete alternative to integrated smart high-side switches, offering flexibility in circuit design where external control logic is preferred. The D2PAK form factor provides a balance between thermal performance and PCB space efficiency.
Replacement Considerations
Direct substitutes include other 50V, 25A N-channel MOSFETs in D2PAK packages from manufacturers like STMicroelectronics or ON Semiconductor. Verify pinout compatibility and thermal resistance values before substitution. Check if the replacement meets the same automotive qualification standards if used in vehicle applications.
