BUK4D110-20PX

$0.10

Description：SMALL SIGNAL MOSFET FOR AUTOMOTI
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:41fae04725ae Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：SMALL SIGNAL MOSFET FOR AUTOMOTI
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.4A (Ta), 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
Rds On (Max) @ Id, Vgs：96mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：365 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 7.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK4D110-20PX

Overview

The BUK4D110-20P is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology, housed in a DFN2020MD-6 (SOT1220) leadless plastic package. It supports a drain-source voltage of -20 V and gate-source voltage of ±12 V. The device delivers a continuous drain current of -6.7 A at 25 °C solder point temperature, with a total power dissipation of 7.5 W under the same conditions. Key electrical parameters include a maximum on-state resistance of 110 mΩ at VGS = -4.5 V and an extended junction temperature range up to 175 °C.

Feature Summary

Trench MOSFET technology enables very fast switching performance.
Side wettable flanks facilitate optical solder joint inspection.
AEC-Q101 qualification ensures suitability for automotive applications.
ESD protection exceeds 1 kV HBM rating.

Applications

DC to DC conversion
High-side load switch
High-speed line driver
Switching circuits

Procurement Notes

Verify the specific suffix 'PX' against official Nexperia documentation, as the provided datasheet references 'BUK4D110-20P'. Confirm that the ordering code matches the required marking code '6N' and package version SOT1220. Ensure design compliance with the absolute maximum ratings defined in IEC 60134 to prevent permanent damage during operation.

Selection Notes

Select this component for designs requiring a compact, thermally enhanced surface-mount solution. The DFN2020MD-6 package offers reduced PCB area requirements while maintaining medium power capability. Consider the 175 °C junction temperature limit for high-thermal environments and verify gate drive compatibility with the specified threshold voltage characteristics.

Part Context

This device belongs to Nexperia's portfolio of P-channel Trench MOSFETs designed for efficient power management. The DFN2020MD-6 package represents a thermal-enhanced ultra-thin small outline form factor, balancing low profile with effective heat dissipation through exposed side pads and bottom thermal contacts.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal resistance values when evaluating potential replacements to ensure mechanical and electrical compatibility within the existing circuit layout.