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Product Detailed Parameters
- Description：BUK6D23-40E/SOT1220/DFN2020MD-
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Nexperia BUK6D23-40EZ is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) leadless ultra-thin plastic package measuring 2 x 2 x 0.65 mm. The device supports an extended junction temperature range up to 175 °C and features side wettable flanks for optical solder inspection. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 19 A at 25 °C, and a maximum total power dissipation of 15 W. The on-state resistance is specified at 23 mΩ under standard conditions.
Feature Summary
- Utilizes Trench MOSFET technology for enhanced performance within a compact leadless package.
- Features side wettable flanks to enable optical solder joint inspection.
- Qualified according to the AEC-Q101 automotive standard for reliability.
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify that the specific ordering suffix 'EZ' corresponds to the exact tape-and-reel packaging configuration required for your assembly line. Confirm that the component meets all applicable RoHS directives and environmental compliance standards mandated by your region. Ensure that the datasheet revision matches the production batch to avoid discrepancies in thermal or electrical specifications during final validation.
Selection Notes
Select this component when a low-profile surface-mount solution is required for high-current switching applications. The DFN2020MD-6 package offers superior thermal performance compared to traditional leaded packages due to its direct connection to the PCB ground plane. Consider the 175 °C operating limit for environments with restricted airflow or elevated ambient temperatures where standard silicon limits would be exceeded.
Part Context
This device belongs to the BUK6D series of N-channel Trench MOSFETs from Nexperia. These components are engineered for medium-power applications requiring robust switching capabilities in minimal footprint designs. The series is widely utilized in industrial and automotive sectors where space constraints and thermal efficiency are critical design drivers.
Replacement Considerations
Direct substitutes within the same family include the BUK6D16-30E and BUK6D43-60E. Verify that the replacement part maintains compatible pinout configurations and package dimensions to ensure mechanical fit without requiring PCB layout modifications.
FAQ
What is the maximum junction temperature rating for this MOSFET?
The device is rated for an extended temperature range with a maximum junction temperature of 175 °C.
How does the package design facilitate quality control during manufacturing?
The DFN2020MD-6 package includes side wettable flanks, which allow for optical inspection of the solder joints after reflow to verify connection integrity.
