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Product Detailed Parameters
- Description：MOSFET P-CH 40V 6A DFN2020MD-6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：43mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1260 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：15W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
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Overview
The Nexperia BUK6D43-40PX is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) leadless SMD plastic package measuring 2 x 2 x 0.65 mm. The device supports an extended junction temperature range up to 175 °C and features side wettable flanks for optical solder inspection verification. Qualified under AEC-Q101 standards, it provides a drain-source voltage of -40 V, a continuous drain current of -14 A at 25 °C, and a total power dissipation of 15 W.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Trench MOSFET technology for optimized performance
- Side wettable flanks enable visual solder joint inspection
Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix 'PX' against official Nexperia documentation to confirm packaging details, as datasheets often reference standard tape-and-reel configurations without explicitly defining unique suffix variations. Ensure the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability. Cross-reference the marking code '4D' with the latest product data sheet to validate manufacturing origin and date codes upon receipt.
Selection Notes
Select this component for designs requiring a compact, thermally efficient P-channel solution capable of operating at elevated temperatures up to 175 °C. The low on-state resistance and fast switching characteristics make it suitable for high-frequency applications. Verify that the gate drive voltage levels are compatible with the specified threshold and on-state requirements for the intended load current.
Part Context
This part belongs to the BUK6D series of medium-power N- and P-channel Trench MOSFETs designed for surface-mount applications. The DFN2020MD-6 package offers a small footprint with enhanced thermal performance compared to traditional packages. The series is engineered to meet the rigorous demands of automotive electronics while maintaining cost-effectiveness for industrial consumer applications.
Replacement Considerations
Consult the official Nexperia replacement guide or contact technical support for verified substitute part numbers. Do not assume pin-compatible alternatives without confirming electrical specifications and thermal characteristics match the original design requirements.
