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Product Detailed Parameters
- Description：PFET, 100A I(D), 40V, 0.006OHM,
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK6E3R4-40C,127 is an N-channel TrenchMOS standard level MOSFET manufactured by Nexperia USA Inc. It features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 58A at case temperature. The device utilizes TrenchMOS technology for low on-resistance and is housed in a D2PAK (TO-263) surface-mount package. It is qualified to the AEC-Q101 standard for automotive applications and supports junction temperatures up to 175°C.
Feature Summary
- N-channel enhancement mode Field-Effect Transistor utilizing advanced TrenchMOS technology
- Qualified to AEC-Q101 standards for high-performance automotive applications
- Suitable for thermally demanding environments with a 175°C rating
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering code suffix against official Nexperia documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target application environment. Cross-reference the datasheet revision history to account for any recent manufacturing or labeling changes.
Selection Notes
Select this component for designs requiring robust N-channel switching in automotive environments. The standard level gate drive characteristics are suitable for typical automotive logic interfaces. Ensure thermal management strategies accommodate the specified power dissipation limits within the D2PAK package constraints.
Part Context
This part belongs to the BUK6 series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered for intermediate to standard level gate drive sources. The series is characterized by its compliance with automotive reliability standards and suitability for high-current power switching tasks in vehicle electrical architectures.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Do not assume pin-compatible alternatives without verifying electrical parameters such as Rds(on), Vgs(th), and package dimensions against the original specification sheet.
