BUK7107-55ATE,118

Description：MOSFET N-CH 55V 75A SOT426
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:3da828f93ab2 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A SOT426
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：116 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4500 pF @ 25 V
FET Feature：Temperature Sensing Diode
Power Dissipation (Max)：272W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-5, D2PAK (4 Leads + Tab), TO-263BB

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BUK7107-55ATE,118

Overview

The BUK7107-55ATE is an N-channel TrenchPLUS standard level FET utilizing TrenchMOS technology in a D2PAK (SOT426) plastic package. It features integrated TrenchPLUS diodes for ESD protection and temperature sensing, with AEC-Q101 qualification for automotive applications. Key electrical parameters include a drain-source voltage of 55 V, continuous drain current of 75 A at Tmb=25°C, and total power dissipation of 272 W. The device exhibits low on-state resistance of 5.8 mΩ typ at VGS=10V and ID=50A, with a gate charge of 116 nC at VGS=10V.

Feature Summary

Integrated temperature sensor enables responsive thermal monitoring
Built-in protection diodes provide electrostatic discharge robustness
Low on-state resistance minimizes conduction losses
Qualified to AEC-Q101 standards for automotive reliability

Applications

Automotive and general purpose power switching
Electrical Power Assisted Steering (EPAS)
Fan control systems
Variable Valve Timing for engines

Procurement Notes

Verify component authenticity through authorized Nexperia distributors or official channels. Confirm the specific revision status and lot traceability against the datasheet Rev. 02 documentation. Ensure storage conditions adhere to the specified moisture sensitivity level and handling guidelines to maintain device integrity prior to assembly.

Selection Notes

Select this component for designs requiring high current handling in automotive environments. The integrated temperature sensing feature simplifies thermal management strategies. Ensure gate drive circuits support the standard level requirements and verify PCB footprint compatibility with the SOT426 package dimensions for proper mounting base connection.

Part Context

This part belongs to the Nexperia TrenchPLUS family of N-channel enhancement mode MOSFETs. It is designed for critical automotive applications where reliability and thermal performance are paramount. The integration of sensing capabilities distinguishes it from standard power switches, offering additional diagnostic potential within complex vehicle electronic architectures.